| PART |
Description |
Maker |
| DS-USB-COM422-PLUS1 |
Future Technology Devices International Ltd
|
List of Unclassifed Manufac...
|
| USB-COM422 |
Future Technology Devices International Ltd
|
List of Unclassifed Manufac...
|
| FT51A-EVM |
Future Technology Devices International Datasheet
|
List of Unclassifed Man...
|
| VNC1L-1A-TRAY VNC1L-1A-REEL |
Vinculum VNC1L Embedded USB Host Controller IC
Future Technology Devices International Ltd.
|
Future Technology Devices International Ltd.
|
| 2FB-XX-F-V |
FUTURE BUS SIGNAL
|
Adam Technologies, Inc.
|
| AN209 |
Using Terminator Technology in Stratix & Stratix GX Devices
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
Altera Corporation
|
| 2FB96F 2FB96M 2FB30F |
FUTURE BUS 2.00mm CENTERLINE EIA STANDARD
|
Adam Technologies, Inc.
|
| OLA-54 |
A SMART Future-Proof Optical Level Attenuator
|
JDS Uniphase
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM100 |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| LR4-380XF LR4-600XF VTP210SL19.2_5.8 MINISMDE190F- |
PolySwitch Resettable Devices Strap Battery Devices
|
Tyco Electronics
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
